Organic light emitting display device

ABSTRACT

An organic light emitting diode (OLED) display device includes a substrate, reflection structure, and a sub-pixel structure. The substrate includes a plurality of sub-pixel regions and a reflection region surrounding the sub-pixel regions. The reflection structure is disposed on the substrate in the reflection region and has a plurality of openings exposing the sub-pixel regions. The reflection structure includes first reflection patterns, second reflection patterns, and connection patterns. The first reflection patterns extend in a first direction parallel to an upper surface of the substrate, and are spaced apart from each other in a second direction perpendicular to the first direction. The second reflection patterns are spaced apart from each other in the first direction between two adjacent first reflection patterns. The connection patterns electrically connect two adjacent second reflection patterns in the second direction. The sub-pixel structure is disposed on the substrate in the sub-pixel region.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims priority under 35 USC § 119 to Korean PatentApplications No. 10-2016-0035194, filed on Mar. 24, 2016 in the KoreanIntellectual Property Office (KIPO), the disclosure of which isincorporated herein in its entirety by reference.

BACKGROUND 1. Field

Example embodiments of the present disclosure relate generally toorganic light emitting diode (OLED) display devices, more particularly,to OLED display devices including a reflection region.

2. Description of the Related Art

A flat panel display (FPD) device is widely used as a display device ofan electronic device due to its lightweight and thinness compared to acathode-ray tube (CRT) display device. Typical examples of the FPDdevice are a liquid crystal display (LCD) device and an organic lightemitting diode (OLED) display device. Compared to the LCD device, theOLED device has several advantages such as a higher luminance and awider viewing angle. In addition, the OLED device can be made thinnerbecause the OLED device does not require a backlight. In the OLEDdevice, electrons and holes are injected into an organic thin layerthrough a cathode and an anode, and then recombined in the organic thinlayer to generate excitons, thereby emitting a light of a certainwavelength.

Recently, a mirror OLED device including a pixel region and a reflectionregion has been developed. The mirror OLED device is capable ofreflecting an image of an object (or a target) that is located in frontof the OLED device by the reflection region.

SUMMARY

Some example embodiments of the present disclosure provide an organiclight emitting diode (OLED) display device capable of reflecting animage of an object that is located in front of the OLED device.

According to some aspect of example embodiments, an OLED device includesa substrate, a reflection structure, and a sub-pixel structure. Thesubstrate includes a plurality of sub-pixel regions and a reflectionregion surrounding the plurality of sub-pixel regions. The reflectionstructure is disposed on the substrate in the reflection region and hasa plurality of openings exposing the plurality of sub-pixel regions. Thereflection structure includes first reflection patterns, secondreflection patterns, and connection patterns. The first reflectionpatterns extend in a first direction that is parallel to an uppersurface of the substrate, and is spaced apart from each other in asecond direction that is perpendicular to the first direction. Thesecond reflection patterns are spaced apart from each other in the firstdirection between two adjacent first reflection patterns among the firstreflection patterns. The connection patterns electrically connect twoadjacent second reflection patterns in the second direction among thesecond reflection patterns. The sub-pixel structure is disposed on thesubstrate in each of the plurality of sub-pixel regions.

In example embodiments, the reflection structure is disposed between thesubstrate and the sub-pixel structure.

In example embodiments, the first reflection patterns may be configuredto receive a first touch sensing voltage from an external device, andthe second reflection patterns may be configured to receive a secondtouch sensing voltage from the external device. The external device maydetect a change of capacitance between the first reflection patterns andthe second reflection patterns.

In example embodiments, each of the first reflection patterns may have aplanar bar shape and may be regularly arranged in the second direction.Each of the second reflection patterns may have an island shape and maybe regularly arranged in the first direction. The first reflectionpatterns and the second reflection patterns may be spaced apart fromeach other.

In example embodiments, each of the first and second reflection patternsmay have a mesh structure including the plurality of openings.

In example embodiments, at least one groove may be formed in a border ofthe first reflection pattern and the second reflection pattern.

In example embodiments, the OLED device may further include a thin filmencapsulation structure disposed on the sub-pixel structure. Each of thesubstrate and the thin film encapsulation structure may have a stackstructure where at least one organic layer and at least one inorganiclayer are alternately stacked, and the stack structure may be flexible.The reflection structure may be in contact with the at least oneinorganic layer of the substrate, and the sub-pixel structure may be incontact with the at least one inorganic layer of the thin filmencapsulation structure.

In example embodiments, the OLED device may further include anencapsulation substrate and a sealant. The encapsulation substrate maybe disposed on the sub-pixel structure. The sealant may be interposedbetween the substrate and the encapsulation substrate, and may bedisposed in outer regions of the substrate and the encapsulationsubstrate. Each of the substrate and the encapsulation substrate mayinclude rigid materials, and the sealant may include a frit. Thesubstrate and the encapsulation substrate may be combined by thesealant.

In example embodiments, the sub-pixel structure may include a lowerelectrode, a light emitting layer, and an upper electrode. The lowerelectrode may be disposed on the substrate and may transmit a light. Thelight emitting layer may be disposed on the lower electrode. The upperelectrode may be disposed on the light emitting layer, and may reflect alight that is emitted from the light emitting layer. A reflectivity ofthe upper electrode may be greater than a reflectivity of the lowerelectrode, and the upper electrode may be disposed on the substrate inthe sub-pixel region and the reflection region.

In example embodiments, the reflection structure may reflect an image ofan object that is located in front of a first surface of the OLEDdevice, and the upper electrode may reflect an image of an object thatis located in front of a second surface of the OLED device. The secondsurface may be opposite to the first surface, and the OLED device maydisplay a displaying image in the first surface through the plurality ofopenings.

In example embodiments, the OLED device may further include asemiconductor and a buffer layer. The semiconductor element may bedisposed on the substrate in the reflection region. The buffer layer maybe disposed on the substrate between the reflection structure and thesemiconductor element. The semiconductor element includes an activelayer disposed on the buffer layer in the reflection region, a gateelectrode disposed on the active layer, and source and drain electrodesdisposed on the gate electrode.

In example embodiments, the connection patterns and the gate electrodemay be simultaneously formed using the same material.

In example embodiments, the OLED device may further include a dielectricmirror structure disposed between the substrate and the reflectionstructure.

In example embodiments, the dielectric mirror structure may include oneor more first dielectric layers and one or more second dielectriclayers. The one or more first dielectric layers may have a firstrefractive index, and the one or more second dielectric layers may bedisposed on the one or more first dielectric layers. The one or moresecond dielectric layers may have a second refractive index that isdifferent from the first refractive index. The one or more firstdielectric layers and the one or more second dielectric layers may bealternately stacked.

According to some aspect of example embodiments, an OLED device includesa substrate, reflection structure, and a sub-pixel structure. Thesubstrate includes a plurality of sub-pixel regions and a reflectionregion surrounding the plurality of sub-pixel regions. The sub-pixelstructure may be disposed on the substrate in each of the plurality ofsub-pixel regions. The reflection structure is disposed on the substratein the reflection region and has a plurality of openings, and theplurality of sub-pixel regions may be exposed through the plurality ofopenings. The reflection structure includes first reflection patternsand second reflection patterns. The first reflection patterns may bearranged in a first direction, and the second reflection patterns may bearranged in the second direction that is perpendicular to the firstdirection.

In example embodiments, the reflection structure may be disposed betweenthe substrate and the sub-pixel structure

In example embodiments, the first reflection patterns may be configuredto receive a first touch sensing voltage from an external device, andthe second reflection patterns may be configured to receive a secondtouch sensing voltage from the external device. The external device maydetect a change of capacitance between the first reflection patterns andthe second reflection patterns.

In example embodiments, each of the first and second reflection patternsmay have a planar bar shape and may be regularly arranged to each other.Each of the first and second reflection patterns may have a meshstructure including the plurality of openings.

In example embodiments, the first reflection patterns and the secondreflection patterns may be crossed to each other in a cross-overregions, and a first group of the plurality of openings of the firstreflection patterns and a second group of the plurality of openings ofthe second reflection patterns that are located in the cross-over regionmay be overlapped to each other.

In example embodiments, the OLED device may further include a thin filmencapsulation structure disposed on the sub-pixel structure. Each of thesubstrate and the thin film encapsulation structure may have a stackstructure where at least one organic layer and at least one inorganiclayer are alternately stacked, and the stack structure may be flexible.The reflection structure may be in contact with the at least oneinorganic layer of the substrate, and the sub-pixel structure may be incontact with the at least one inorganic layer of the thin filmencapsulation structure.

In example embodiments, the OLED device may further include asemiconductor element and a buffer layer. The semiconductor element maybe disposed on the substrate in the reflection region. The buffer layermay be disposed on the substrate between the first reflection patternand the semiconductor element. The semiconductor element may include anactive layer disposed on the buffer layer in the reflection region, agate electrode disposed on the active layer, and source and drainelectrodes disposed on the gate electrode. The second reflectionpatterns and the gate electrode may be simultaneously formed using thesame material.

In example embodiments, the OLED device may further include an auxiliarywiring. The auxiliary wiring may be disposed on the second reflectionpattern, and may be electrically connected to the second reflectionpatterns. The auxiliary wiring and the source and drain electrodes maybe simultaneously formed using the same materials.

In example embodiments, the OLED device may further include a dielectricmirror structure disposed between the substrate and the reflectionstructure. The dielectric mirror structure may include one or more firstdielectric layers and one or more second dielectric layers. The one ormore first dielectric layers may have a first refractive index. The oneor more second dielectric layers may be disposed on the one or morefirst dielectric layers and may have a second refractive index that isdifferent from the first refractive index. The one or more firstdielectric layers and the one or more second dielectric layers may bealternately stacked.

According to example embodiments, an OLED device includes a substrate, asub-pixel structure, and a sensing structure. The substrate may includea plurality of sub-pixel regions and a reflection region surrounding theplurality of sub-pixel regions. The sub-pixel structure may be disposedon the substrate in each of the plurality of sub-pixel regions. Thesensing structure may be disposed on the substrate in the reflectionregion and may have a plurality of openings. The plurality of sub-pixelregions may be exposed through the plurality of openings. The sensingstructure may include first sensing patterns and second sensing patternsinsulated from the first sensing patterns. The sensing structure may bedisposed between the substrate and the sub-pixel structure.

In example embodiments, the sensing structure may further includeconnection patterns electrically connecting two adjacent second sensingpatterns in a second direction among the second sensing patterns. Thefirst sensing patterns may extend in a first direction that isperpendicular to the second direction and may be spaced apart from eachother in the second direction. The second sensing patterns may be spacedapart from each other in the first direction and the second direction.

In example embodiments, the first sensing patterns may be arranged in afirst direction, and the second sensing patterns may be arranged in asecond direction that is perpendicular to the first direction.

In example embodiments, each of the first sensing patterns and thesecond sensing patterns may reflect light entering through thesubstrate.

In example embodiments, the first sensing patterns may be applied with afirst voltage and the second sensing patterns may be applied with asecond voltage. A change of capacitance between the first sensingpatterns and the second sensing patterns may be detected to determine aposition of touch.

In example embodiments, the first voltage may be a sensing input signaland the second voltage may be a sensing output signal.

In example embodiments, the change of capacitance between the firstsensing patterns and the second sensing patterns may measure a pressureof touch.

In example embodiments, the OLED device may further include a circuitthat is configured to generate the first voltage and the second voltage

An OLED device according to example embodiments includes the reflectionstructure having the first reflection patterns and the second reflectionpatterns that may serve as touch sensor electrodes. The reflectionstructure may reflect an image of an object that is located in front ofthe OLED device. Accordingly, the OLED device may serve as a mirror OLEDdevice of a bottom emission structure having a relatively thin thicknessbecause the OLED device does not include a touch screen panel. Inaddition, as the OLED device includes the flexible substrate and theencapsulation substrate, the OLED device may have a curved shape.Further, an image of an object that is located in front of the back ofthe OLED device may be reflected from the upper electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments can be understood in more detail from the followingdescription taken in conjunction with the accompanying drawings, inwhich:

FIG. 1 is a cross-sectional view illustrating an organic light emittingdiode (OLED) display device in accordance with example embodiments;

FIG. 2 is a planar view describing a reflection structure included inthe OLED device of FIG. 1;

FIG. 3 is an enlarged planar view corresponding to region ‘A’ of FIG. 2;

FIG. 4 is a block diagram for describing an external device electricallyconnected to a reflection structure included in the OLED device of FIG.1

FIGS. 5, 6, 7, 8, 9, and 10 are cross-sectional views illustrating amethod of manufacturing an OLED device in accordance with exampleembodiments;

FIG. 11 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments;

FIG. 12 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments;

FIG. 13 is a planar view describing a reflection structure included inthe OLED device of FIG. 12;

FIG. 14 is an enlarged planar view corresponding to region ‘B’ of FIG.13;

FIG. 15 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments;

FIG. 16 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments;

FIG. 17 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments;

FIG. 18 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments;

FIG. 19 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments;

FIG. 20 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments; and

FIG. 21 is a cross-sectional view describing a sealant included in theOLED device of FIG. 20.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, embodiments of the present disclosure will be explained indetail with reference to the accompanying drawings.

FIG. 1 is a cross-sectional view illustrating an organic light emittingdiode (OLED) display device in accordance with example embodiments, andFIG. 2 is a planar view describing a reflection structure included inthe OLED device of FIG. 1. FIG. 3 is an enlarged planar viewcorresponding to region ‘A’ of FIG. 2, and FIG. 4 is a block diagram fordescribing an external device electrically connected to a reflectionstructure included in the OLED device of FIG. 1. FIG. 1 may correspondto a cross-sectional view taken along line I-I′ of FIG. 2.

Referring to FIGS. 1, 2, 3, and 4, an OLED device 100 may include asubstrate 110, a reflection structure 380, a buffer layer 115, asemiconductor element 250, a planarization layer 270, a sub-pixelstructure 300, a pixel defining layer 310, and a thin film encapsulation(TFE) structure 450. Here, the semiconductor element 250 may include anactive layer 130, a gate insulation layer 150, a gate electrode 170, aninsulating interlayer 190, a source electrode 210, and a drain electrode230. The sub-pixel structure 300 may include a lower electrode 290, alight emitting layer 330, and an upper electrode 340. In addition, thereflection structure 380 may include a plurality of first reflectionpatterns 382, a plurality of second reflection patterns 384, and aplurality of connection patterns 180. As illustrated in FIGS. 2 and 3,each of the first reflection patterns 382 may extend in a firstdirection D1 that is parallel to an upper surface of the substrate 110,and may be spaced apart from each other in a second direction D2 that issubstantially perpendicular to the first direction D1. Each of thesecond reflection patterns 384 may be spaced apart from each other inthe first direction D1 between adjacent two the first reflectionpatterns 382 among a plurality of the first reflection patterns 382. Theconnection pattern 180 may electrically connect adjacent two secondreflection patterns 384 in the second direction D2 among a plurality ofthe second reflection patterns 384. In addition, touch sensing voltagesmay be applied to the reflection structure 380, and the OLED device 100may sense a user's touch on the surface of the OLED device 100 using achanged by detecting a change of capacitance.

The OLED device 100 may include a sub-pixel region 10 and a reflectionregion 20. The sub-pixel region 10 may be located between the sub-pixelregions 10. The sub-pixel structure 300 may be disposed in the sub-pixelregion 10, and a displaying image may be displayed in a third directionD3 (i.e., a direction that is perpendicular to the first direction D1and the second direction D2) from the TFE structure 450 into thesubstrate 110. In addition, the reflection structure 380 and thesemiconductor element 250 may be disposed in the reflection region 20,and an image of an object that is located in front (i.e., a first(lower) surface of the substrate 110) of the OLED device 100 may bedisplayed in the third direction D3 on the reflection structure 380. Asthe OLED device 100 includes the reflection structure 380 capable ofreflecting the image of the object that is located in front of the OLEDdevice 100 and serving as a touch sensing electrode, the OLED device 100may serve as a mirror OLED device of a bottom emission structure capableof sensing a touch input of the user.

Referring again to FIG. 1, the substrate 110 may be formed of atransparent material. In example embodiments, the substrate 110 may beformed of a flexible transparent material such as a flexible transparentresin substrate (e.g., a polyimide substrate). The polyimide substratemay include at least one polyimide layer and at least one barrier layer.Since the polyimide substrate is relatively thin and flexible, thepolyimide substrate may be disposed on a rigid glass substrate to helpsupport the formation of an upper structure (e.g., the reflectionstructure 380, the semiconductor element 250, and the sub-pixelstructure 300). The substrate 110 may have a structure in which one ormore polyimide layers and one or more barrier layers are alternatelystacked on the rigid glass substrate. In a manufacturing the OLED device100, after the buffer layer 115 is provided on the barrier layer of thepolyimide substrate, the upper structure may be disposed on the bufferlayer 115. After the upper structure is formed on the buffer layer 115,the rigid glass substrate under which the polyimide substrate isdisposed may be removed. It may be difficult to directly form the upperstructure on the polyimide substrate because the polyimide substrate isrelatively thin and flexible. Accordingly, the upper structure is formedon the polyimide substrate and the rigid glass substrate, and then thepolyimide substrate may serve as the substrate 110 of the OLED device100 after the removal of the rigid glass substrate. As the OLED device100 includes the sub-pixel region 10 and the reflection region 20, thesubstrate 110 may also include the sub-pixel region 10 and thereflection region 20.

The polyimide layer may include a random copolymer or block copolymer.The polyimide layer may have a high transparency, a low coefficient ofthermal expansion, and a high glass transition temperature. Since thepolyimide layer includes an imide radical, the polyimide layer may havean excellent heat resistance, chemical resistance, wear resistance, andelectrical characteristics.

The barrier layer may include an organic material or an inorganicmaterial. Examples of the organic material include, but are not limitedto, a photoresist, a polyacryl-based resin, a polyimide-based resin, apolyamide-based resin, a siloxane-based resin, an acryl-based resin, andan epoxy-based resin. Examples of the inorganic materials include, butare not limited to, a silicon compound, and a metal oxide. For example,the barrier layer may include, but are not limited to, silicon oxide(SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), siliconoxycarbide (SiOxCy), silicon carbon nitride (SiCxNy), aluminum oxide(AlOx), aluminum nitride (AlNx), tantalum oxide (TaOx), hafnium oxide(HfOx), zirconium oxide (ZrOx), and titanium oxide (TiOx). In exampleembodiments, the barrier layer may include essentially an inorganicmaterial. The barrier layer may block water or moisture from permeatinginto the sub-pixel structure 300 via the polyimide layer. That is, thebarrier layer and the TFE structure 450 may protect the sub-pixelstructure 300. Alternatively, the substrate 110 may include a quartzsubstrate, a synthetic quartz substrate, a calcium fluoride substrate, afluoride-doped quartz substrate, a soda lime glass substrate, anon-alkali substrate, or the like.

Referring to FIGS. 1, 2, 3, and 4, the reflection structure 380 may bedisposed on the substrate 110 in the reflection region 20. Thereflection structure 380 may include a plurality of first reflectionpatterns 382 and a plurality of second reflection patterns 384. Thefirst reflection patterns 382 and the second reflection patterns 384 maybe disposed on the barrier layer of the substrate 10, and the barrierlayer may be an inorganic layer. Each of the first reflection patterns382 may extend in the first direction D1. In addition, each of the firstreflection patterns 382 may be spaced apart from each other in thesecond direction D2, and may be regularly arranged. Further, each of thefirst reflection patterns 382 may have a substantially planar shape of abar including a plurality of protrusion portions. The second reflectionpatterns 384 may be regularly arranged in the first direction D1 betweenadjacent first reflection patterns 382 among the plurality of firstreflection patterns 382, and may have an island shape. For example, theisland shape of the second reflection pattern 384 may be a planarsquare, and may be disposed between the protrusion portions of adjacentfirst reflection patterns 382. The connection pattern 180 may be incontact with and electrically connected to adjacent two secondreflection patterns 384 in the second direction D2 among the pluralityof second reflection patterns 384. The first reflection patterns 382 andthe second reflection patterns 384 may be spaced apart from each other,and may be located at the same level on the substrate 10. While theconnection pattern 180 may be located at different levels with the firstand second reflection patterns 382 and 384. For example, the connectionpattern 180 may be disposed on the first and second reflection patterns382 and 384. As described above, since the OLED device 100 includes thereflection structure 380, an image of an object that is located in frontof the first surface S1 of the OLED device 100 may be reflected in thethird direction D3.

In example embodiments, as illustrated in FIGS. 2 and 3, each of thefirst reflection patterns 382 and the second reflection patterns 384 mayhave a mesh structure including a plurality of openings 383. Thesub-pixel region 10 may correspond to each of the openings 383, and thesub-pixel structure 300 may be disposed in a region corresponding toeach of the openings 383. That is, a first group of sub-pixel regions 10may be located in the openings 383 included in the first reflectionpattern 382, and a second group of sub-pixel regions 10 may be locatedin the openings 383 included in the second reflection pattern 384. Asdescribed above, as the OLED device 100 includes the openings 383 of thereflection structure 380, a light emitted from the sub-pixel structure300 may be emitted via the openings 383 in the third direction D3. Inexample embodiments, as illustrated in FIG. 3, grooves 386 and 387 maybe formed in a border or an edge of the first reflection pattern 382 andthe second reflection pattern 384 where at least a lateral portion ofthe opening 383 is opened. The grooves 386 and 387 may be formed toexpose the corresponding sub-pixel regions 10.

In example embodiments, as illustrated FIG. 4, the OLED device 100 mayelectrically connect the first and second reflection patterns 382 and384 and an external device 105 through a touch sensor wiring (notshown), and may provide first and second touch sensing voltagesgenerated from the external device 105 to the first and secondreflection patterns 382 and 384, respectively. The external device 105may detect a change of capacitance between the first reflection pattern382 and the second reflection pattern 384. The external device 105 mayprovide the first touch sensing voltage that is a sensing input signalto the first reflection pattern 382 and receive the second touch sensingvoltage that is a sensing output signal through the second reflectionpattern 384. Here, the first touch sensing voltage may have a voltagelevel that is periodically changed (or a periodically variable voltagelevel), and the second touch sensing voltage may have a direct currentvoltage level. For example, when the user of the OLED device 100contacts the first surface S1 (e.g., a contact of a user's finger, aportion of a user's body, a touch pen.), a capacitance between the firstreflection pattern 382 and the second reflection pattern 384 that arecorresponding to (or adjacent to) the contact surface may be changed. Inother word, a change of capacitance may be generated between a portionof the body that is contacted to the first surface S1 and the first andsecond reflection patterns 382 and 384, and the external device 105 mayreceive the sensing output signal that is changed by the changedcapacitance through the touch sensor wiring. Thus, the external device105 may detect the changed sensing output signal. That is, the externaldevice 105 and the OLED device 100 may sense a contact position of theuser's touch using the first and second touch sensing voltages. Each ofthe first reflection pattern 382 and the second reflection pattern 384may include one or more of a metal, a metal alloy, metal nitride,conductive metal oxide, and a transparent conductive material. Forexample, each of the first reflection patterns 382 and the secondreflection patterns 384 may be formed of gold (Au), silver (Ag),aluminum (Al), an alloy of aluminum, aluminum nitride (AlNx), silver(Ag), an alloy of silver, tungsten (W), tungsten nitride (WNx), copper(Cu), an alloy of copper, nickel (Ni), palladium (Pd), magnesium (Mg),Calcium (Ca), Lithium (Li), chrome (Cr), chrome nitride (CrNx),molybdenum (Mo), an alloy of molybdenum, titanium (Ti), titanium nitride(TiNx), platinum (Pt), tantalum (Ta), tantalum nitride (TaNx), neodymium(Nd), scandium (Sc), strontium ruthenium oxide (SRO), zinc oxide (ZnOx),stannum oxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), indiumtin oxide (ITO), or indium zinc oxide (IZO). These may be used alone orin a suitable combination thereof. Alternatively, each of the firstreflection patterns 382 and the second reflection patterns 384 may havea multi-layered structure.

Accordingly, although the first and second reflection patterns 382 and384 having a respective thickness are disposed, the OLED device 100 maydisplay the displaying image in the third direction D3 via the openings383. The thicknesses of the first and second reflection patterns 382 and384 are determined to be thick enough to reflect light such that theOLED device 100 may reflect an image of an object that is located infront of the first surface S1 of the OLED device 100 in the thirddirection D3. In addition, the OLED device 100 may detect a contactposition of the user through the reflection structure 380 and theexternal device 105.

In FIG. 4, the external device 105 is disposed outside of the OLEDdevice 100, but the present disclosure is not limited thereto. In someexample embodiments, the external device 105 may be disposed inside ofthe OLED device 100 or integrated into the OLED device 100.

In addition, the OLED device 100 may employ a mutual-capacitance sensingmethod, but the present disclosure is not limited thereto. In someexample embodiments, the OLED device 100 may use a self-capacitancesensing method.

Referring again to FIG. 1, the buffer layer 115 may be disposed on thesubstrate 110 and the reflection structure 380. The buffer layer 115 maybe disposed on the entire substrate 110 covering the first reflectionpattern 382 and the second reflection pattern 384 in the reflectionregion 20 on the substrate 110. For example, the buffer layer 115 maycover the first reflection pattern 382 and the second reflection pattern384 to provide a substantially even surface without a step around thefirst reflection pattern 382 and the second reflection pattern 384.Alternatively, the buffer layer 115 may cover the first reflectionpattern 382 and the second reflection pattern 384, and may be disposedwith a substantially uniform thickness along a profile of the firstreflection pattern 382 and the second reflection pattern 384. The bufferlayer 115 may prevent diffusion of metal atoms and/or impurities intothe substrate 110 into the semiconductor element 250. Additionally, thebuffer layer 115 may control a rate of a heat transfer in acrystallization process for forming the active layer 130, therebyobtaining a substantially uniform active layer. Furthermore, the bufferlayer 115 may improve a surface flatness of the substrate 110 when asurface of the substrate 110 is relatively uneven. According to a typeof the substrate 110, at least two buffer layers 115 may be provided onthe substrate 110, or the buffer layer 115 may not be disposed. In someexample embodiments, the buffer layer 115 may include one or more ofSiOx, SiNx, and SiOxNy.

The active layer 130 may be disposed on the buffer layer 115 in thereflection region 20. For example, the active layer 130 may include oneor more of an oxide semiconductor, an inorganic semiconductor (e.g.,amorphous silicon and polysilicon), and an organic semiconductor.

The gate insulation layer 150 may be disposed on the buffer layer 115and the active layer 130. The gate insulation layer 150 may cover theactive layer 130 in the reflection region 20 on the buffer layer 115,and may be disposed on the entire substrate 110. For example, the gateinsulation layer 150 may cover the active layer 130 to provide asubstantially even surface without a step around the active layer 130.Alternatively, the gate insulation layer 150 may cover the active layer130, and may be disposed with a substantially uniform thickness along aprofile of the active layer 130. The gate insulation layer 150 mayinclude one or more of a silicon compound and a metal oxide.

The gate electrode 170 and the connection pattern 180 may be disposed onthe gate insulation layer 150. The gate electrode 170 may be disposed ona portion of the gate insulation layer 150 in the reflection region 20to overlap the active layer 130 in a planar view. The gate electrode 170may include one or more of a metal, a metal alloy, metal nitride,conductive metal oxide, and a transparent conductive material. These maybe used alone or in a suitable combination thereof. Alternatively, thegate electrode 170 may have a multi-layered structure.

The connection pattern 180 may be disposed on a portion of the gateinsulation layer 150 in the reflection region 20 to overlap the secondreflection patterns 384 in a planar view. The connection pattern 180 maybe in contact with the second reflection patterns 384 via a contact holeformed by partially removing the gate insulation layer 150 and thebuffer layer 115. As illustrated in FIG. 2, the connection pattern 180may electrically connect adjacent two the second reflection patterns 384among a plurality of the second reflection patterns 384. The connectionpattern 180 may include one or more of a metal, a metal alloy, metalnitride, conductive metal oxide, and a transparent conductive material.These may be used alone or in a suitable combination thereof.Alternatively, the connection pattern 180 may have a multi-layeredstructure. In example embodiments, the connection pattern 180 and thegate electrode 170 may be simultaneously formed using the same material.

The insulating interlayer 190 may be disposed on the gate insulationlayer 150, the gate electrode 170, and the connection pattern 180. Theinsulating interlayer 190 may cover the gate electrode 170 and theconnection pattern 180 in the reflection region 20, and may be disposedon the entire substrate 110. For example, the insulating interlayer 190may cover the gate electrode 170 and the connection pattern 180 toprovide a substantially even surface without a step around the gateelectrode 170 and the connection pattern 180. Alternatively, theinsulating interlayer 190 may cover the gate electrode 170 and theconnection pattern 180, and may be disposed with a substantially uniformthickness along a profile of the gate electrode 170 and the connectionpattern 180. The insulating interlayer 190 may include one or more of asilicon compound and a metal oxide.

The source electrode 210 and the drain electrode 230 may be disposed onthe insulating interlayer 190 in the reflection region 20. The sourceelectrode 210 may be in contact with a first side of the active layer130 via a first contact hole formed by removing a portion of the gateinsulation layer 150 and the insulating interlayer 190. The drainelectrode 230 may be in contact with a second side of the active layer130 via a second contact hole formed by removing a portion of the gateinsulation layer 150 and the insulating interlayer 190. Each of thesource and drain electrodes 210 and 230 may include one or more of ametal, a metal alloy, metal nitride, conductive metal oxide, and atransparent conductive material. These may be used alone or in asuitable combination thereof. Alternatively, each of the source anddrain electrodes 210 and 230 may have a multi-layered structure.Accordingly, the semiconductor element 250 including the active layer130, the gate insulation layer 150, the gate electrode 170, theinsulating interlayer 190, the source electrode 210, and the drainelectrode 230 may be disposed.

In example embodiments, the semiconductor element 250 of the OLED device100 has a top gate structure, but the present disclosure is not limitedthereto. In some example embodiments, the semiconductor element 250 mayhave a bottom gate structure.

The planarization layer 270 may be disposed on the insulating interlayer190 and the source and drain electrodes 210 and 230. For example, theplanarization layer 270 may be disposed with a relatively largethickness to cover the insulating interlayer 190 and the source anddrain electrodes 210 and 230. In this case, the planarization layer 270may have a substantially even upper surface, and a planarization processmay be further performed on the planarization layer 270 to implement theeven upper surface of the planarization layer 270. The planarizationlayer 270 may include one or more of an organic material and inorganicmaterial.

The lower electrode 290 may be disposed on the planarization layer 270in the sub-pixel region 10 and a portion of the reflection region 20.For example, a thickness of the lower electrode 290 may be less thanthat of the upper electrode 340 such that a light emitted from the lightemitting layer 330 is transmitted in the third direction D3. The lowerelectrode 290 may be in contact with the drain electrode 230 via acontact hole formed by removing a portion of the planarization layer270. In addition, the lower electrode 290 may be electrically connectedto the semiconductor element 250. The lower electrode 290 may besubstantially transparent. For example, the lower electrode 290 mayinclude one or more of a metal, a metal alloy, metal nitride, conductivemetal oxide, and a transparent conductive material. In some exampleembodiments, the lower electrode 290 may have a multi-layered structure.

The pixel defining layer 310 may be disposed on a portion of the lowerelectrode 290 and the planarization layer 270. For example, the pixeldefining layer 310 may cover both lateral portions of the lowerelectrode 290 such that a portion of an upper surface of the lowerelectrode 290 is exposed. The pixel defining layer 310 may include anorganic material or an inorganic material.

The light emitting layer 330 may be disposed on the lower electrode 290at the portion exposed by the pixel defining layer 310. The lightemitting layer 330 may have a multi-layered structure including one ormore of an emission layer (EL), a hole injection layer (HIL), a holetransfer layer (HTL), an electron transfer layer (ETL), and an electroninjection layer (EIL). The HIL, the HTL, the EL, the ETL, and the EILmay be sequentially disposed between the lower electrode 290 and theupper electrode 340. The EL of the light emitting layer 330 may beformed using at least one of light emitting materials capable ofgenerating different colors of light (e.g., a red color of light, a bluecolor of light, and a green color of light). Alternatively, the EL ofthe light emitting layer 330 may generally generate a white color oflight by stacking a plurality of light emitting materials capable ofgenerating different colors of light such as a red color of light, agreen color of light, and a blue color of light. In this case, a colorfilter may be disposed under the light emitting layer 330 to overlap thelight emitting layer 330 on the insulating interlayer 190. The colorfilter may include at least one selected from a red color filter, agreen color filter, and a blue color filter. Alternatively, the colorfilter may include a yellow color filter, a cyan color filter, and amagenta color filter. The color filter may include a photosensitiveresin or a color photoresist.

The upper electrode 340 may be disposed on the pixel defining layer 310and the light emitting layer 330 in the sub-pixel region 10 and thereflection region 20. The upper electrode 340 may be entirely disposedon the pixel defining layer 310 and the light emitting layer 330. TheOLED device 100 may display a displaying image toward the thirddirection D3 in the sub-pixel region 10 (e.g., a bottom emissionstructure). Thus, a reflectivity of the upper electrode 340 may begreater than that of the lower electrode 290 such that a light emittedfrom the light emitting layer 330 is reflected from the upper electrode340 in the third direction D3. The reflectivity of the upper electrode340 and the lower electrode 290 may be varied by changing the materialproperties and/or the thickness of the upper electrode 340 and the lowerelectrode 290. In example embodiments, the upper electrode 340 mayreflect an image of an object that is located in front of a secondsurface S2 of the OLED device 100, and the second surface S2 of the OLEDdevice 100 may be opposite to the first surface S1 of the OLED device100. For example, when the TFE structure 450 is transparent, an image ofan object that is located in a direction −D3 that is opposite to thethird direction D3 may be displayed on the upper electrode 340. That is,the OLED device 100 may reflect the image of the object in bothdirections (e.g., D3 and −D3) or on the both surfaces (e.g., the firstand second surfaces S1 and S2). In some example embodiments, when theupper electrode 340 transmits a portion of a light and reflects aremaining portion of the light, the OLED device 100 may display thedisplaying image on the both surfaces. In this case, the OLED device 100may reflect the image of the object in the both surfaces and may displaythe displaying image on the both surfaces. The upper electrode 340 mayinclude one or more of a metal, a metal alloy, metal nitride, andconductive metal oxide. For example, the upper electrode 340 may beformed of Au, Ag, Al, Pt, Ni, Ti, Pd, Mg, Ca, Li, Cr, Ta, W, Cu, Mo, Sc,Nd, Iridium (Ir), an alloy of aluminum, AlNx, an alloy of silver, WNx,an alloy of copper, CrNx, an alloy of molybdenum, TiNx, TaNx, SRO, etc.These may be used alone or in a suitable combination thereof.Alternatively, the upper electrode 340 may have a multi-layeredstructure.

The TFE structure 450 may be disposed on the upper electrode 340. Forexample, the first encapsulation layer 451 may be disposed on thesub-pixel structure 300. The TFE structure 450 may include at least onefirst encapsulation layer and at least one second encapsulation layer.For example, the second encapsulation layer 452 may be disposed on thefirst encapsulation layer 451. The first encapsulation layers 451, 453,and 455 and the second encapsulation layers 452 and 454 may bealternately and repeatedly arranged. The first encapsulation layer 451may cover the upper electrode 340, and may be disposed with asubstantially uniform thickness along a profile of the upper electrode340. The first encapsulation layer 451 may prevent the sub-pixelstructure 300 form being deteriorated by the permeation of moisture,water, oxygen, etc. In addition, the first encapsulation layer 451 mayprotect the sub-pixel structure 300 from an external impact. The firstencapsulation layer 451 may include an inorganic material.

The second encapsulation layer 452 may be disposed on the firstencapsulation layer 451. The second encapsulation layer 452 may improvea surface flatness of the OLED device 100, and may protect the sub-pixelstructure 300 disposed in the sub-pixel region 10. The secondencapsulation layer 452 may include an organic material.

The first encapsulation layer 453 may be disposed on the secondencapsulation layer 452. The first encapsulation layer 453 may cover thesecond encapsulation layer 452, and may be disposed with a substantiallyuniform thickness along a profile of the second encapsulation layer 452.The first encapsulation layer 453 together with the first encapsulationlayer 451 and the second encapsulation layer 452 may prevent thesub-pixel structure 300 form being deteriorated by the permeation ofmoisture, water, oxygen, etc. In addition, the first encapsulation layer453 together with the first encapsulation layer 451 and the secondencapsulation layer 452 may protect the pixel structure from an externalimpact. The first encapsulation layer 453 may include an inorganicmaterial.

The second encapsulation layer 454 may be disposed on the firstencapsulation layer 453. The second encapsulation layer 454 may performfunctions substantially the same as or similar to those of the secondencapsulation layer 452, and the second encapsulation layer 454 mayinclude a material substantially the same as or similar to that of thesecond encapsulation layer 452. The first encapsulation layer 455 may bedisposed on the second encapsulation layer 454. The first encapsulationlayer 455 may perform functions substantially the same as or similar tothose of the first encapsulation layers 451 and 453, and the firstencapsulation layer 455 may include a material substantially the same asor similar to that of the first encapsulation layers 451 and 453. Asdescribed above, the OLED device 100 includes the flexible substrate 110and the TFE structure 450, and may have a curved shape. Since thereflection structure 380 having a thickness that is thick enough toreflect light is disposed in the reflection region 20, the reflectionregion 20 may not be readily bent. However, the openings 383 of thereflection structure 380 disposed in the sub-pixel region 10 allows thesub-pixel region 10 to be bent. Accordingly, the OLED device 100 mayhave a substantially curved shape.

In some example embodiments, the TFE structure 450 may have atriple-layered structure having the first encapsulation layer 451, thesecond encapsulation layer 452, and the first encapsulation layer 453.In other example embodiments, the TFE structure 450 may have aseptuple-layered structure including the first encapsulation layer 451,the second encapsulation layer 452, the first encapsulation layer 453,the second encapsulation layer 454, the first encapsulation layer 455,an extra first encapsulation layer, and an extra second encapsulationlayer. Alternatively, when the substrate 110 is formed as a rigidsubstrate, the TFE structure 450 may include one or more of a quartzsubstrate, a synthetic quartz substrate, a calcium fluoride substrate, afluoride-doped quartz substrate, a sodalime glass substrate, and anon-alkali substrate.

The OLED device 100 in accordance with example embodiments includes thereflection structure 380 and the upper electrode 340. The displayingimage may be displayed via the openings 383, and the image of an objectthat is located in front of the first surface S1 of the OLED device 100may be reflected from the reflection structure 380. In some exampleembodiments, the first reflection patterns 382, the second reflectionpatterns 384, and the connection pattern 180 included in the reflectionstructure 380 may serve as touch sensing electrodes to detect a contactposition of a user's touch on the OLED device 100. Further, the image ofthe object that is located in front of the second surface S2 of the OLEDdevice 100 may be reflected from the upper electrode 340. Accordingly,the OLED device 100 may serve as a mirror OLED device of a bottomemission structure having a relatively thin thickness because the OLEDdevice 100 does not include a touch screen panel. In addition, the OLEDdevice 100 including the flexible substrate 110 and the TFE structure450 may be made to have a curved shape.

FIGS. 5, 6, 7, 8, 9, and 10 are cross-sectional views illustrating amethod of manufacturing an OLED device in accordance with exampleembodiments.

Referring to FIG. 5, a substrate 510 including a sub-pixel region 10 anda reflection region 20 may be provided. The substrate 510 may be formedof a transparent material. The substrate 510 may be formed using aflexible transparent material such as a flexible transparent resinsubstrate (e.g., a polyimide substrate). In this case, the polyimidesubstrate may include at least one polyimide layer and at least onebarrier layer.

The polyimide layer may be formed using a random copolymer or a blockcopolymer. The polyimide layer may have a high transparency, a lowcoefficient of thermal expansion, and a high glass transitiontemperature. Since the polyimide layer includes an imide radical, thepolyimide layer may have an excellent heat resistance, chemicalresistance, wear resistance, and electrical characteristics.

The barrier layer may be formed using an organic material or aninorganic material. Examples of the organic materials may include, butare not limited to, a photoresist, a polyacryl-based resin, apolyimide-based resin, a polyamide-based resin, a siloxane-based resin,an acryl-based resin, and an epoxy-based resin. An example of theinorganic materials may include, but are not limited to, siliconcompound, metal oxide. For example, the buffer layer 115 may includeSiOx, SiNx, SiOxNy, SiOxCy, SiCxNy, AlOx, AlNx, TaOx, HfOx, ZrOx, TiOx,etc. In example embodiments, the barrier layer may include essentiallyan inorganic material. The barrier layer may block water or moisturefrom permeating via the polyimide layer. Alternatively, the substrate510 may be formed of a quartz substrate, a synthetic quartz substrate, acalcium fluoride substrate, a fluoride-doped quartz substrate, a sodalime glass substrate, or a non-alkali substrate.

A first reflection pattern 782 and a second reflection pattern 784 maybe formed on the substrate 510 in the reflection region 20. Each of thefirst reflection patterns 782 may extend in the first direction D1. Inaddition, each of the first reflection patterns 782 may be spaced apartfrom each other in the second direction D2, and may be regularlyarranged. Further, each of the first reflection patterns 782 may have asubstantially planar shape of a bar including a plurality of protrusionportions. The second reflection patterns 784 may be regularly arrangedin the first direction D1 between adjacent first reflection patterns 782among the plurality of first reflection patterns 782, and may have anisland shape. The first reflection patterns 782 and the secondreflection patterns 784 may be spaced apart from each other, and may belocated at the same level. The first reflection pattern 782 and thesecond reflection pattern 784 may reflect an image of an object that islocated in front of a first surface S1 (e.g., a lower surface of thesubstrate 510) of an OLED device.

Each the first reflection pattern 782 and the second reflection pattern784 may include a plurality of openings 783, similar to the plurality ofopenings 383 of FIG. 3. Here, the sub-pixel region 10 may correspond tothe opening 783. For example, the sub-pixel structures may be formed inthe openings 783, respectively. That is, a first group of sub-pixelregions 10 may be located in the openings 783 included in the firstreflection pattern 782, and a second group of sub-pixel regions 10 maybe located in the openings 783 included in the second reflection pattern784. In example embodiments, grooves may be formed in a border or anedge) of the first reflection pattern 782 and the second reflectionpattern 784 where at least of a lateral portion of the opening 783 isopened. The grooves may be formed to expose the corresponding sub-pixelregions 10.

In example embodiments, the OLED device may electrically connect thefirst and second reflection patterns 782 and 784 and an external device(e.g., the external device 105 of FIG. 4) through a touch sensor wiring(not shown), and may provide first and second touch sensing voltagesgenerated from the external device to the first and second reflectionpatterns 782 and 784, respectively. In addition, the external device maydetect a change of capacitance between the first reflection pattern 782and the second reflection pattern 784. For example, the external devicemay provide the first touch sensing voltage that is a sensing inputsignal to the first reflection pattern 782 and receive the second touchsensing voltage that is a sensing output signal through the secondreflection pattern 784. Here, the first touch sensing voltage may have avoltage level that is periodically changed, and the second touch sensingvoltage may have a direct current voltage level.

Each of the first reflection pattern 782 and the second reflectionpattern 784 may be formed using one or more of a metal, a metal alloy,metal nitride, conductive metal oxide, and a transparent conductivematerial. For example, each of the first reflection pattern 382 and thesecond reflection pattern 384 may be formed of Au, Ag, Al, an alloy ofaluminum, AlNx, Ag, an alloy of silver, W, WNx, Cu, an alloy of copper,Ni, Pd, Mg, Ca, Li, Cr, CrNx, Mo, an alloy of molybdenum, Ti, TiNx, Pt,Ta, TaNx, Nd, Sc, SRO, ZnOx, SnOx, InOx, GaOx, ITO, or IZO. These may beused alone or in a suitable combination thereof. Alternatively, each ofthe first reflection pattern 782 and the second reflection pattern 784may have a multi-layered structure.

Referring to FIG. 6, a buffer layer 515 may be formed on the substrate510, the first reflection pattern 782, and the second reflection pattern784. The buffer layer 515 may be disposed on the substrate 510 coveringthe first reflection pattern 782 and the second reflection pattern 784in the reflection region 20 on the substrate 510. For example, thebuffer layer 515 may cover the first reflection pattern 782 and thesecond reflection pattern 784 to provide a substantially even surfacewithout a step around the first reflection pattern 782 and the secondreflection pattern 784. Alternatively, the buffer layer 515 may coverthe first reflection pattern 782 and the second reflection pattern 784,and may be formed with a substantially uniform thickness along a profileof the first reflection pattern 782 and the second reflection pattern784. The buffer layer 515 may prevent diffusion of metal atoms and/orimpurities into the substrate 510. Additionally, the buffer layer 515may control a rate of a heat transfer in a crystallization process forforming an active layer, thereby obtaining a substantially uniformactive layer. Furthermore, the buffer layer 515 may improve a surfaceflatness of the substrate 510 when a surface of the substrate 510 isrelatively uneven. According to a type of the substrate 510, at leasttwo buffer layers 515 may be provided on the substrate 510, or thebuffer layer 515 may not be disposed. In some example embodiments, thebuffer layer 515 may be formed of SiOx, SiNx, or SiOxNy.

An active layer 530 may be disposed on the buffer layer 515 in thereflection region 20. For example, the active layer 530 may be formed ofan oxide semiconductor, an inorganic semiconductor, or an organicsemiconductor.

A gate insulation layer 550 may be formed on the buffer layer 515 andthe active layer 530. The gate insulation layer 550 may cover the activelayer 530 in the reflection region 20 on the buffer layer 515, and maybe formed on the entire substrate 510. For example, the gate insulationlayer 550 may cover the active layer 530 to provide a substantially evensurface without a step around the active layer 530. Alternatively, thegate insulation layer 550 may cover the active layer 530, and may beformed with a substantially uniform thickness along a profile of theactive layer 530. The gate insulation layer 550 may be formed of asilicon compound or a metal oxide.

A gate electrode 570 and a connection pattern 580 may be formed on thegate insulation layer 550. For example, after a preliminary electrode isformed on the gate insulation layer 550 having an opening (or a contacthole) that exposes a portion of the second reflection pattern 784, thegate electrode 570 and the conductive pattern 580 may be formed bypartially removing the preliminary electrode. That is, the conductivepattern 580 and the gate electrode 570 may be simultaneously formedusing the same material.

The gate electrode 570 may be formed on a portion of the gate insulationlayer 550 in the reflection region 20 to overlap the active layer 530 ina planar view. The connection pattern 580 may be formed on a portion ofthe gate insulation layer 550 in the reflection region 20 to overlap thesecond reflection pattern 784 in a planar view. The connection pattern580 may electrically connect adjacent two second reflection patterns 784among a plurality of the second reflection patterns 784. Each of thegate electrode 570 and the connection pattern 580 may be formed usingone or more of a metal, a metal alloy, metal nitride, conductive metaloxide, and a transparent conductive material. These may be used alone orin a suitable combination thereof. Alternatively, each of the gateelectrode 570 and the connection pattern 580 may have a multi-layeredstructure. Accordingly, a reflection structure 780 including the firstreflection pattern 782, the second reflection pattern 784, and theconnection pattern 580 may be formed.

Referring to FIG. 7, an insulating interlayer 590 may be formed on thegate insulation layer 550, the gate electrode 570, and the connectionpattern 580. The insulating interlayer 590 may cover the gate electrode570 and the connection pattern 580 in the reflection region 20, and maybe formed on the entire substrate 510. For example, the insulatinginterlayer 590 may cover the gate electrode 570 and the connectionpattern 580 to provide a substantially even surface without a steparound the gate electrode 570 and the connection pattern 580.Alternatively, the insulating interlayer 590 may cover the gateelectrode 570 and the connection pattern 580, and may be formed with asubstantially uniform thickness along a profile of the gate electrode570 and the connection pattern 580. The insulating interlayer 590 may beformed of a silicon compound or a metal oxide.

A source electrode 610 and a drain electrode 630 may be formed on theinsulating interlayer 590 in the reflection region 20. The sourceelectrode 610 may be in contact with a first side of the active layer530 via a first contact hole formed by removing a portion of the gateinsulation layer 550 and the insulating interlayer 590. The drainelectrode 630 may be in contact with a second side of the active layer530 via a second contact hole formed by removing a portion of the gateinsulation layer 550 and the insulating interlayer 590. Each of thesource and drain electrodes 610 and 630 may be formed using one or moreof a metal, a metal alloy, metal nitride, conductive metal oxide, and atransparent conductive material. These may be used alone or in asuitable combination thereof. Alternatively, each of the source anddrain electrodes 610 and 630 may have a multi-layered structure.Accordingly, a semiconductor element 650 including the active layer 530,the gate insulation layer 550, the gate electrode 570, the insulatinginterlayer 590, the source electrode 610, and the drain electrode 630may be formed.

Referring to FIG. 8, a planarization layer 670 may be formed on theinsulating interlayer 590 and the source and drain electrodes 610 and630. For example, the planarization layer 670 may be disposed with arelatively large thickness to cover the insulating interlayer 590 andthe source and drain electrodes 610 and 630. In this case, theplanarization layer 670 may have a substantially even upper surface, anda planarization process may be further performed on the planarizationlayer 670 to implement the even upper surface of the planarization layer670. The planarization layer 670 may be formed using an organic materialor an inorganic material.

A lower electrode 690 may be formed on the planarization layer 670 inthe sub-pixel region 10 and a portion of the reflection region 20. Forexample, a reflectivity of the lower electrode 690 may be less than thatof an upper electrode such that a light emitted from a light emittinglayer is transmitted in a third direction D3 that is perpendicular tothe first and second directions D1 and D2. The lower electrode 690 maybe in contact with the drain electrode 630 via a contact hole formed byremoving a portion of the planarization layer 670. In addition, thelower electrode 690 may be electrically connected to the semiconductorelement 650. The lower electrode 690 may be substantially transparent.For example, the lower electrode 690 may be formed of a metal, a metalalloy, metal nitride, conductive metal oxide, or a transparentconductive material. In some example embodiments, the lower electrode690 may have a multi-layered structure.

Referring to FIG. 9, a pixel defining layer 710 may be formed on aportion of the lower electrode 690 and the planarization layer 670. Forexample, the pixel defining layer 710 may cover both lateral portions ofthe lower electrode 690 such that a portion of an upper surface of thelower electrode 690 is exposed. The pixel defining layer 710 may beformed using an organic material or an inorganic material.

The light emitting layer 730 may be formed on the lower electrode 690 atthe portion exposed by the pixel defining layer 710. The light emittinglayer 730 may have a multi-layered structure including one or more of anEL, an HIL, an HTL, an ETL, and an EIL. The HIL, the HTL, the EL, theETL, and the EIL may be sequentially formed between the lower electrode690 and an upper electrode 740. The EL of the light emitting layer 730may be formed using at least one of light emitting materials capable ofgenerating different colors of light (e.g., a red color of light, a bluecolor of light, and a green color of light). Alternatively, the EL ofthe light emitting layer 730 may generally generate a white color oflight by stacking a plurality of light emitting materials capable ofgenerating different colors of light such as a red color of light, agreen color of light, and a blue color of light. In this case, a colorfilter may be formed under the light emitting layer 730 to overlap thelight emitting layer 730 on the insulating interlayer 590. The colorfilter may include at least one selected from a red color filter, agreen color filter, and a blue color filter. Alternatively, the colorfilter may include a yellow color filter, a cyan color filter, and amagenta color filter. The color filter may be formed using aphotosensitive resin or a color photoresist.

The upper electrode 740 may be formed on the pixel defining layer 710and the light emitting layer 730 in the sub-pixel region 10 and thereflection region 20. The upper electrode 740 may be entirely formed onthe pixel defining layer 710 and the light emitting layer 730. The OLEDdevice may display a displaying image toward the third direction D3 inthe sub-pixel region 10. Thus, a reflectivity of the upper electrode 740may be greater than that of the lower electrode 690 such that a lightemitted from the light emitting layer 730 is reflected from the upperelectrode 740 in the third direction D3. In example embodiments, theupper electrode 740 may reflect an image of an object that is located infront of a second surface S2 of the OLED device, and the second surfaceS2 of the OLED device may be opposite to the first surface S1 of theOLED device. The upper electrode 740 may be formed of a metal, a metalalloy, metal nitride, or conductive metal oxide. These may be used aloneor in a suitable combination thereof. Alternatively, the upper electrode740 may have a multi-layered structure. Accordingly, a sub-pixelstructure 700 including the lower electrode 690, the light emittinglayer 730, and the upper electrode 740 may be formed.

Referring to FIG. 10, a TFE structure 850 may be formed on the upperelectrode 740. The TFE structure 850 may include at least one firstencapsulation layer and at least one second encapsulation layer. Forexample, the second encapsulation layer 852 may be disposed on the firstencapsulation layer 851. The first encapsulation layers 851, 853, and855 and the second encapsulation layers 852 and 854 may be alternatelyand repeatedly arranged. The first encapsulation layer 851 may cover theupper electrode 740, and may be formed with a substantially uniformthickness along a profile of the upper electrode 740. The firstencapsulation layer 851 may prevent the sub-pixel structure 700 formbeing deteriorated by the permeation of moisture, water, oxygen, etc. Inaddition, the first encapsulation layer 851 may protect the sub-pixelstructure 700 from an external impact. The first encapsulation layer 851may be formed of an inorganic material.

The second encapsulation layer 852 may be formed on the firstencapsulation layer 851. The second encapsulation layer 852 may improvea surface flatness of the OLED device, and may protect the sub-pixelstructure 700 formed in the sub-pixel region 10. The secondencapsulation layer 852 may be formed of an organic material.

The first encapsulation layer 853 may be formed on the secondencapsulation layer 852. The first encapsulation layer 853 may cover thesecond encapsulation layer 852, and may be formed with a substantiallyuniform thickness along a profile of the second encapsulation layer 852.The first encapsulation layer 853 together with the first encapsulationlayer 851 and the second encapsulation layer 852 may prevent thesub-pixel structure 700 form being deteriorated by the permeation ofmoisture, water, oxygen, etc. In addition, the first encapsulation layer853 together with the first encapsulation layer 851 and the secondencapsulation layer 852 may protect the pixel structure from an externalimpact. The first encapsulation layer 853 may be formed using inorganicmaterials.

The second encapsulation layer 854 may be formed on the firstencapsulation layer 853. The second encapsulation layer 854 may performfunctions substantially the same as or similar to those of the secondencapsulation layer 852, and the second encapsulation layer 854 may beformed using a material substantially the same as or similar to that ofthe second encapsulation layer 852. A first encapsulation layer 855 maybe formed on the second encapsulation layer 854. The first encapsulationlayer 855 may perform functions substantially the same as or similar tothose of the first encapsulation layers 851 and 853, and the firstencapsulation layer 855 may be formed using a material substantially thesame as or similar to that of the first encapsulation layers 851 and853. As described above, the OLED device includes the flexible substrate510 and the TFE structure 850, and may have a curved shape.

In some example embodiments, the TFE structure 850 may have atriple-layered structure having the first encapsulation layer 851, thesecond encapsulation layer 852, and the first encapsulation layer 853.In other example embodiments, the TFE structure 850 may have aseptuple-layered structure including the first encapsulation layer 851,the second encapsulation layer 852, the first encapsulation layer 853,the second encapsulation layer 854, the first encapsulation layer 855,an extra first encapsulation layer, and an extra second encapsulationlayer. Alternatively, when the substrate 510 is formed as a rigidsubstrate, the TFE structure 850 may include one or more of a quartzsubstrate, a synthetic quartz substrate, a calcium fluoride substrate, afluoride-doped quartz substrate, a sodalime glass substrate, and anon-alkali substrate. Accordingly, the OLED device 100 illustrated inFIG. 1 may be manufactured.

FIG. 11 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments. An OLED device illustrated in FIG.11 may have a configuration substantially the same as or similar to thatof the OLED device 100 described with reference to FIGS. 1, 2, 3, and 4except a dielectric mirror structure 200. In FIG. 11, detaileddescriptions for elements that are substantially the same as or similarto elements described with reference to FIGS. 1, 2, 3, and 4 may not berepeated.

Referring to FIGS. 1, 2, 3, 4, and 11, an OLED device may include asubstrate 110, a dielectric mirror structure 200, a reflection structure380, a buffer layer 115, a semiconductor element 250, a planarizationlayer 270, a sub-pixel structure 300, a pixel defining layer 310, and aTFE structure 450. Here, the semiconductor element 250 may include anactive layer 130, a gate insulation layer 150, a gate electrode 170, aninsulating interlayer 190, a source electrode 210, and a drain electrode230. The sub-pixel structure 300 may include a lower electrode 290, alight emitting layer 330, and an upper electrode 340. In addition, thereflection structure 380 may include a plurality of first reflectionpatterns 382, a plurality of second reflection patterns 384, and aplurality of connection patterns 180. Further, the dielectric mirrorstructure 200 may include a first dielectric layer 111, a seconddielectric layer 112, and a third dielectric layer 113.

The first dielectric layer 111 may be disposed on the substrate 110covering the entire substrate 110. In example embodiments, the firstdielectric layer 111 may have a first refractive index. For example, thefirst dielectric layer 111 may have the first refractive index bycontrolling a weight ratio of materials included in the first dielectriclayer 111, or by controlling a thickness of the first dielectric layer111. The first dielectric layer 111 may also serve as an additionalbarrier layer or an additional buffer layer. For example, the firstdielectric layer 111 may include one or more of a silicon compound andmetal oxide. For example, the first dielectric layer 111 may be formedof SiOx, SiNx, SiOxNy, SiOxCy, SiCxNy, AlOx, AlNx, TaOx, HfOx, ZrOx, orTiOx.

The second dielectric layer 112 may be disposed on the first dielectriclayer 111 covering the entire first dielectric layer 111. In exampleembodiments, the second dielectric layer 112 may have a secondrefractive index that is different from the first refractive index. Thesecond dielectric layer 112 may have the second refractive index bycontrolling a weight ratio of materials included in the seconddielectric layer 112, or by controlling a thickness of the seconddielectric layer 112. For example, the first refractive index may be ahigh refractive index, and the second refractive index may be a lowrefractive index. Alternatively, the first refractive index may be a lowrefractive index, and the second refractive index may be a highrefractive index. The second dielectric layer 112 may also serve as anadditional barrier layer and an additional buffer layer. The seconddielectric layer 112 may include silicon compound, metal oxide, etc. Forexample, the second dielectric layer 112 may be formed of SiOx, SiNx,SiOxNy, SiOxCy, SiCxNy, AlOx, AlNx, TaOx, HfOx, ZrOx, or TiOx.

The third dielectric layer 113 may be disposed on the second dielectriclayer 112 covering the entire second dielectric layer 112. In exampleembodiments, the third dielectric layer 113 may have the firstrefractive index. For example, the third dielectric layer 113 and thefirst dielectric layer 111 may be substantially the same. The thirddielectric layer 113 may also serve as an additional barrier layer or anadditional buffer layer. The third dielectric layer 113 may include asilicon compound or metal oxide. Accordingly, the dielectric mirrorstructure 200 including the first dielectric layer 111, the seconddielectric layer 112, and the third dielectric layer 113 may bedisposed. Alternatively, an additional dielectric layer may be disposedon the third dielectric layer 113. For example, the additionaldielectric layer and the second dielectric layer 112 may have the samerefractive index.

As described above, the dielectric mirror structure 200 may have a stackstructure that the high refractive index layer and the low refractiveindex layer are alternately stacked. For example, an external light maypass through the substrate 110 in a direction −D3 (e.g., a directionfrom the substrate 110 into the TFE structure 450) that is opposite tothe third direction D3. A portion of the external light passing throughthe substrate 110 may be reflected as a predetermined color by opticalinterference in boundary surfaces between the first, second, and thirddielectric layers 111, 112, and 113. In particular, the dielectricmirror structure 200 may selectively reflect a light corresponding to awavelength generating constructive or destructive optical interferencesamong the external light incident from the outside. In addition, aremaining portion of the external light passing through the substrate110 may be reflected from the reflection patterns 382 and 384 toward thethird direction D3 in the reflection region 20. Accordingly, an image ofan object that is located in front of the OLED device may be reflectedas a predetermined reflection color. For example, the first dielectriclayer 111 is formed with a thickness of about 50 Angstroms by usingTiOx, and the second dielectric layer 112 is formed with a thickness ofabout 300 Angstroms by using SiOx. In addition, the third dielectriclayer 113 is formed with a thickness of about 350 Angstroms by usingTiOx. In this case, the front of the OLED device may be shown as asubstantially blue color. Alternatively, the first dielectric layer 111is formed with a thickness of about 100 Angstroms by using TiOx, and thesecond dielectric layer 112 is formed with a thickness of about 300Angstroms by using SiOx. In addition, the third dielectric layer 113 isformed with a thickness of about 1000 Angstroms by using TiOx. In thiscase, the front of the OLED device may be shown as a substantially browncolor. In some example embodiments, the first dielectric layer 111 isformed with a thickness of about 200 Angstroms by using TiOx, and thesecond dielectric layer 112 is formed with a thickness of about 400Angstroms by using SiOx. In addition, the third dielectric layer 113 isformed with a thickness of about 100 Angstroms by using TiOx. In thiscase, the front of the OLED device may be shown as a substantiallysilver color.

In example embodiments, when the semiconductor element 250 is notactivated, the light emitting layer 330 may not emit a light (e.g., aturned-off state of the OLED device). In this case, an external lightmay pass through the substrate 110 in a direction −D3 that is oppositeto the third direction D3. A portion of the external light passingthrough the substrate 110 may be reflected as a predetermined color byoptical interference in boundary surfaces of the first, second, andthird dielectric layers 111, 112, and 113. In particular, the dielectricmirror structure 200 may selectively reflect a light corresponding to awavelength generating a constructive optical interference or adestructive optical interference among the external light incident fromthe outside. In addition, a remaining portion of the external lightpassing through the substrate 110 may be reflected from the upperelectrode 740 toward the first direction D1 in the sub-pixel region 10.Accordingly, an image of an object that is located in front of the OLEDdevice may be reflected as a predetermined reflection color.

FIG. 12 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments, and FIG. 13 is a planar viewdescribing a reflection structure included in the OLED device of FIG.12. FIG. 14 is an enlarged planar view corresponding to region B′ ofFIG. 13. An OLED device 1000 illustrated in FIGS. 12, 13, and 14 mayhave a configuration substantially the same as or similar to that of theOLED device 100 described with reference to FIGS. 1, 2, 3, and 4 excepta reflection structure 1380. In FIGS. 12, 13, and 14, detaileddescriptions for elements that are substantially the same as or similarto elements described with reference to FIGS. 1, 2, 3, and 4 may not berepeated. FIG. 12 may correspond to a cross-sectional view taken alongline II-IF of FIG. 13.

Referring to FIGS. 1, 2, 3, and 4, an OLED device 1000 may include asubstrate 110, a reflection structure 1380, a buffer layer 115, asemiconductor element 250, a planarization layer 270, a sub-pixelstructure 300, a pixel defining layer 310, and a TFE structure 450.Here, the semiconductor element 250 may include an active layer 130, agate insulation layer 150, a gate electrode 170, an insulatinginterlayer 190, a source electrode 210, and a drain electrode 230. Thesub-pixel structure 300 may include a lower electrode 290, a lightemitting layer 330, and an upper electrode 340. In addition, thereflection structure 1380 may include a plurality of first reflectionpatterns 1382 and a plurality of second reflection patterns 1384.

As illustrated in FIGS. 13 and 14, each of the first reflection patterns1382 may extend in a first direction D1 that is parallel to an uppersurface of the substrate 110, and may be spaced apart from each other ina second direction D2 that is substantially perpendicular to the firstdirection D1. Each of the second reflection patterns 1384 may extend inthe second direction D2 on the first reflection patterns 1382, and maybe spaced apart from each other in the first direction D1. In addition,touch sensing voltages may be applied to the reflection structure 1380,and the OLED device 1000 may sense a user's touch on the surface of theOLED device 1000 by detecting a change of capacitance.

Each of the first and second reflection patterns 1382 and 1384 may havea planar shape of a bar, and may cross or intersect each other and beregularly arranged. In addition, the first reflection pattern 1382 maybe located at different levels with the second reflection pattern 1384on the substrate 110. For example, the second reflection pattern 1384may be disposed on the first reflection pattern 1382. As describedabove, as the OLED device 1000 includes the reflection structure 1380,an image of an object that is located in front of the first surface S1of the OLED device 1000 may be reflected in the third direction D3.

In example embodiments, as illustrated in FIGS. 13 and 14, each of thefirst reflection patterns 1382 and the second reflection patterns 1384may have a mesh structure including a plurality of openings 1383. Thesub-pixel region 10 may correspond to each of the openings 1383, and thesub-pixel structures 300 may be disposed in a region corresponding toeach of the openings 1383. That is, a first group of sub-pixel regions10 may be located in the openings 1383 included in the first reflectionpattern 1382, and a second group of sub-pixel regions 10 may be locatedin the openings 1383 included in the second reflection pattern 1384. Asdescribed above, as the OLED device 1000 includes the openings 1383 ofthe reflection structure 1380, a light emitted from the sub-pixelstructure 300 may be emitted via the openings 1383 in the thirddirection D3. In example embodiments, as illustrated in FIG. 14, theopenings 1383 located in a portion crossing the first reflection pattern1382 and the second reflection pattern 1384 may be overlapped to eachother such that the sub-pixel region 10 is exposed. Alternatively, asize of each of the openings 1383 located in a portion crossing thefirst reflection pattern 1382 and the second reflection pattern 1384 maybe different from each other.

In example embodiments, the OLED device 1000 may electrically connectthe first and second reflection patterns 1382 and 1384 and an externaldevice (e.g., external device 105 of FIG. 4) through a touch sensorwiring (not shown), and may provide first and second touch sensingvoltages generated from the external device to the first and secondreflection patterns 1382 and 1384, respectively. The external device maydetect a change of capacitance between the first reflection pattern 1382and the second reflection pattern 1384. The external device may providethe first touch sensing voltage that is a sensing input signal to thefirst reflection pattern 1382 and receive the second touch sensingvoltage that is a sensing output signal through the second reflectionpattern 1384. Here, the first touch sensing voltage may have a voltagelevel that is periodically changed, and the second touch sensing voltagemay have a direct current voltage level. For example, when the user ofthe OLED device 1000 contacts the first surface S1, a capacitancebetween the first reflection pattern 1382 and the second reflectionpattern 1384 that are corresponding to the contact surface may bechanged. In other word, a change of capacitance may be generated betweena portion of the body that is contacted to the first surface S1 and thefirst and second reflection patterns 1382 and 1384, and the externaldevice may receive the sensing output signal that is changed by thechanged capacitance, through the touch sensor wiring. Thus, the externaldevice may detect the changed sensing output signal. That is, theexternal device and the OLED device 1000 may sense a contact position ofthe user's touch using the first and second touch sensing voltages.After a contact of the user and the OLED device 1000 is ended (e.g., theuser and the OLED device 1000 are electrically separated), the externaldevice may provide the first and second touch sensing voltages to thefirst and second reflection patterns 1382 and 1384, respectively. Eachof the first reflection pattern 1382 and the second reflection pattern1384 may include one or more of a metal, a metal alloy, metal nitride,conductive metal oxide, and a transparent conductive material. Forexample, each of the first reflection patterns 1382 and the secondreflection patterns 1384 may be formed of Au, Ag, Al, Pt, Ni, Ti, Pd,Mg, Ca, Li, Cr, Ta, W, Cu, Mo, Sc, Nd, Ir, an alloy of aluminum, AlNx,an alloy of silver, WNx, an alloy of copper, CrNx, an alloy ofmolybdenum, TiNx, TaNx, or SRO. These may be used alone or in a suitablecombination thereof. Alternatively, each of the first reflection pattern1382 and the second reflection pattern 1384 may have a multi-layeredstructure.

Accordingly, although the first and second reflection patterns 1382 and1384 having a large thickness are disposed, the OLED device 1000 maydisplay the displaying image in the third direction D3 via the openings1383. The thicknesses of the first and second reflection patterns 382and 384 are determined to be thick enough to reflect light such that theOLED device 1000 may reflect an image of an object that is located infront of the first surface S1 of the OLED device 1000 in the thirddirection D3. In addition, the OLED device 1000 may detect a contactposition of the user through the reflection structure 1380 and theexternal device.

FIG. 15 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments. An OLED device illustrated in FIG.15 may have a configuration substantially the same as or similar to thatof the OLED device 1000 described with reference to FIGS. 12, 13, and 14except a reflection structure 1385. In FIG. 15, detailed descriptionsfor elements that are substantially the same as or similar to elementsdescribed with reference to FIGS. 12, 13, and 14 may not be repeated.

Referring to FIGS. 12, 13, 14, and 15, the reflection structure 1385 mayinclude a first reflection pattern 1382 and a second reflection pattern1384. The first reflection pattern 1382 may be disposed on the substrate110, and the second reflection pattern 1384 may be disposed on theinsulating interlayer 190. For example, after a preliminary electrode isformed on the insulating interlayer 190, the source electrode 210, andthe drain electrode 230, and the second reflection pattern 1384 may beformed by partially removing the preliminary electrode. That is, thesource electrode 210, the drain electrode 230, and the second reflectionpattern 1384 may be simultaneously formed using the same material.

FIG. 16 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments. An OLED device illustrated in FIG.16 may have a configuration substantially the same as or similar to thatof the OLED device 1000 described with reference to FIGS. 12, 13, and 14except a dielectric mirror structure 200. In FIG. 16, detaileddescriptions for elements that are substantially the same as or similarto elements described with reference to FIGS. 12, 13, and 14 may not berepeated.

Referring to FIGS. 12, 13, 14, and 16, an OLED device may include asubstrate 110, a dielectric mirror structure 200, a reflection structure1380, a buffer layer 115, a semiconductor element 250, a planarizationlayer 270, a sub-pixel structure 300, a pixel defining layer 310, and aTFE structure 450. Here, the semiconductor element 250 may include anactive layer 130, a gate insulation layer 150, a gate electrode 170, aninsulating interlayer 190, a source electrode 210, and a drain electrode230. The sub-pixel structure 300 may include a lower electrode 290, alight emitting layer 330, and an upper electrode 340. In addition, thereflection structure 1380 may include a plurality of first reflectionpatterns 1382 and a plurality of second reflection patterns 1384.Further, the dielectric mirror structure 200 may include a firstdielectric layer 111, a second dielectric layer 112, and a thirddielectric layer 113.

The first dielectric layer 111 may be disposed on the substrate 110covering the entire substrate 110. In example embodiments, the firstdielectric layer 111 may have a first refractive index. For example, thefirst dielectric layer 111 may have the first refractive index bycontrolling a weight ratio of materials included in the first dielectriclayer 111, or by controlling a thickness of the first dielectric layer111. The first dielectric layer 111 may include one or more of a siliconcompound and metal oxide.

The second dielectric layer 112 may be disposed on the first dielectriclayer 111 covering the entire first dielectric layer 111. In exampleembodiments, the second dielectric layer 112 may have a secondrefractive index that is different from the first refractive index. Thesecond dielectric layer 112 may have the second refractive index bycontrolling a weight ratio of materials included in the seconddielectric layer 112, or by controlling a thickness of the seconddielectric layer 112. For example, the first refractive index may be ahigh refractive index, and the second refractive index may be a lowrefractive index. The second dielectric layer 112 may include one ormore of a silicon compound and metal oxide.

The third dielectric layer 113 may be disposed on the second dielectriclayer 112 covering the entire second dielectric layer 112. In exampleembodiments, the third dielectric layer 113 may have the firstrefractive index. For example, the third dielectric layer 113 and thefirst dielectric layer 111 may be substantially the same. The thirddielectric layer 113 may include one or more of a silicon compound andmetal oxide. Alternatively, an additional dielectric layer may bedisposed on the third dielectric layer 113. For example, the additionaldielectric layer and the second dielectric layer 112 may have the samerefractive index.

FIG. 17 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments. An OLED device illustrated in FIG.17 may have a configuration substantially the same as or similar to thatof the OLED device 1000 described with reference to FIGS. 12, 13, and 14except a reflection structure 1385 and a dielectric mirror structure200. In FIG. 17, detailed descriptions for elements that aresubstantially the same as or similar to elements described withreference to FIGS. 12, 13, and 14 may not be repeated.

Referring to FIGS. 12, 13, 14, and 17, an OLED device may include asubstrate 110, a dielectric mirror structure 200, a reflection structure1385, a buffer layer 115, a semiconductor element 250, a planarizationlayer 270, a sub-pixel structure 300, a pixel defining layer 310, and aTFE structure 450. Here, the semiconductor element 250 may include anactive layer 130, a gate insulation layer 150, a gate electrode 170, aninsulating interlayer 190, a source electrode 210, and a drain electrode230. The sub-pixel structure 300 may include a lower electrode 290, alight emitting layer 330, and an upper electrode 340. In addition, thereflection structure 1385 may include a plurality of first reflectionpatterns 1382 and a plurality of second reflection patterns 1384.Further, the dielectric mirror structure 200 may include a firstdielectric layer 111, a second dielectric layer 112, and a thirddielectric layer 113.

The first dielectric layer 111 may be disposed on the substrate 110. Inexample embodiments, the first dielectric layer 111 may have a firstrefractive index. The first dielectric layer 111 may include one or moreof a silicon compound and metal oxide.

The second dielectric layer 112 may be disposed on the first dielectriclayer 111. In example embodiments, the second dielectric layer 112 mayhave a second refractive index that is different from the firstrefractive index. For example, the first refractive index may be a highrefractive index, and the second refractive index may be a lowrefractive index. The second dielectric layer 112 may include one ormore of a silicon compound and metal oxide.

The third dielectric layer 113 may be disposed on the second dielectriclayer 112. In example embodiments, the third dielectric layer 113 mayhave the first refractive index. For example, the third dielectric layer113 and the first dielectric layer 111 may be substantially the same.

The reflection structure 1385 may include a first reflection pattern1382 and a second reflection pattern 1384. The first reflection pattern1382 may be disposed on the substrate 110, and the second reflectionpattern 1384 may be disposed on the insulating interlayer 190. Forexample, after a preliminary electrode is formed on the insulatinginterlayer 190, the source electrode 210, and the drain electrode 230,and the second reflection pattern 1384 may be formed by partiallyremoving the preliminary electrode. That is, the source electrode 210,the drain electrode 230, and the second reflection pattern 1384 may besimultaneously formed using the same material.

FIG. 18 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments, and FIG. 19 is a cross-sectionalview illustrating an OLED device in accordance with example embodiments.OLED devices illustrated in FIGS. 18 and 19 may have a configurationsubstantially the same as or similar to that of the OLED device 1000described with reference to FIGS. 12, 13, and 14 except a firstauxiliary wiring 1180 and a second auxiliary wiring 1190. In FIGS. 18and 19, detailed descriptions for elements that are substantially thesame as or similar to elements described with reference to FIGS. 12, 13,and 14 may not be repeated.

Referring to FIGS. 12, 13, 14, and 18, an OLED device may include asubstrate 110, a reflection structure 1380, a buffer layer 115, asemiconductor element 250, a first auxiliary wiring 1180, aplanarization layer 270, a sub-pixel structure 300, a pixel defininglayer 310, and a TFE structure 450. Here, the semiconductor element 250may include an active layer 130, a gate insulation layer 150, a gateelectrode 170, an insulating interlayer 190, a source electrode 210, anda drain electrode 230. The sub-pixel structure 300 may include a lowerelectrode 290, a light emitting layer 330, and an upper electrode 340.In addition, the reflection structure 1380 may include a plurality offirst reflection patterns 1382 and a plurality of second reflectionpatterns 1384.

The first auxiliary wiring 1180 may be disposed on the insulatinginterlayer 190 overlapping the reflection structure 1380 in thereflection region 20. The first auxiliary wiring 1180 may be in contactwith the second reflection pattern 1384 via a contact hole formed byremoving a portion of the insulating interlayer 190. The first auxiliarywiring 1180 may be electrically connected to the second reflectionpattern 1384 such that a wiring resistance of the second reflectionpattern 1384 is reduced. Alternatively, the reflection structure 1380may serve as a touch sensing electrode, and an external device maydetect a pressure or force sensing and/or sense a pressure or forcetouch using a capacitor formed between the first reflection pattern 1382and the first auxiliary wiring 1180.

In some example embodiments, the first auxiliary wiring 1180 may be incontact with the first reflection pattern 1382 via a contact hole formedremoving each portion of the insulating interlayer 190, the gateinsulation layer 150, and the buffer layer 115, and the first auxiliarywiring 1180 may be electrically connected to the first reflectionpattern 1382 such that a wiring resistance of the first reflectionpattern 1382 is reduced.

In some example embodiments, as illustrated in FIG. 19, the OLED devicemay further include a second auxiliary wiring 1190 disposed on theplanarization layer 270. The second auxiliary wiring 1190 may be incontact with the first auxiliary wiring 1180 via a contact hole byremoving a portion of the insulating interlayer 190. That is, the secondauxiliary wiring 1190 may be electrically connected to the firstauxiliary wiring 1180 and the second reflection pattern 1384.

FIG. 20 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments, and FIG. 21 is a cross-sectionalview describing a sealant included in the OLED device of FIG. 20. OLEDdevices illustrated in FIGS. 20 and 21 may have a configurationsubstantially the same as or similar to that of the OLED device 100described with reference to FIGS. 1, 2, 3, and 4 except a substrate 110,a sealant 410, and an encapsulation substrate 350. In FIGS. 20 and 21,detailed descriptions for elements that are substantially the same as orsimilar to elements described with reference to FIGS. 1, 2, 3, and 4 maynot be repeated.

Referring to FIGS. 20 and 21, an OLED device may include a substrate110, a reflection structure 380, a buffer layer 115, a semiconductorelement 250, a planarization layer 270, a sub-pixel structure 300, apixel defining layer 310, a sealant 410, and an encapsulation substrate350. Here, the semiconductor element 250 may include an active layer130, a gate insulation layer 150, a gate electrode 170, an insulatinginterlayer 190, a source electrode 210, and a drain electrode 230. Thesub-pixel structure 300 may include a lower electrode 290, a lightemitting layer 330, and an upper electrode 340. In addition, thereflection structure 380 may include a plurality of first reflectionpatterns 382, a plurality of second reflection patterns 384, and aplurality of connection patterns 180.

The substrate 110 may be formed of a transparent material. In exampleembodiments, the substrate 110 may include a quartz substrate, asynthetic quartz substrate, a calcium fluoride substrate, afluoride-doped quartz substrate, a soda lime glass substrate, anon-alkali substrate, or the like.

The encapsulation substrate 350 may be disposed on the upper electrode340. The encapsulation substrate 350 and the substrate 110 may have thesame material. For example, the encapsulation substrate 350 may includea quartz substrate, a synthetic quartz substrate, a calcium fluoridesubstrate, a fluoride-doped quartz substrate, a soda lime glasssubstrate, a non-alkali substrate, or the like.

As illustrated in FIG. 21, a display panel 400 may be disposed betweenthe substrate 110 and the encapsulation substrate 350. For example, thedisplay panel 400 may include the reflection structure 380, the bufferlayer 115, a plurality of semiconductor elements 250, the planarizationlayer 270, a plurality of sub-pixel structures 300, and the pixeldefining layer 310 that are disposed on the substrate 110.

The sealant 410 may be interposed between the substrate 110 and theencapsulation substrate 350, and may be disposed in outer regions of thesubstrate 110 and the encapsulation substrate 350. The outer regions ofthe substrate 110 and the encapsulation substrate 350 where the sealant410 is disposed may generally correspond to the boundary regions of thesubstrate 110 and the encapsulation substrate 350. In some cases, smalledge portions of the substrate 110 and/or the encapsulation substrate350 may extend out beyond the outer regions of the substrate 110 and/orthe encapsulation substrate 350. An encapsulation process may beperformed to combine the substrate 110 and the encapsulation substrate350. In this case, the sealant 410 may be interposed in the outerregions between the substrate 110 and the encapsulation substrate 350.

The sealant may include a frit, or the like. For example, the substrate110 and the encapsulation substrate 350 may be combined to each otherthrough a laser irradiation process. Here, the laser may be irradiatedinto the sealant 410. In the laser irradiation process, a phase of thesealant 410 may be changed from a solid phase to a liquid phase. Then,the sealant 410 of the liquid phase may be cured to the solid phaseagain after a predetermined time. In accordance with the phase change ofthe sealant 410, the substrate 110 may be combined with theencapsulation substrate 350. The sealed structure of the substrate 110and the encapsulation substrate 350 may protect the OLED device frompermeation of water, moisture, oxygen, etc. The OLED device may not bedeteriorated by the water, the moisture, the oxygen, etc.

The present disclosure may be applied to various types and applicationsof display devices including an organic light emitting diode (OLED)display device. For example, the present disclosure may be applied to avehicle-display device, a ship-display device, an aircraft-displaydevice, a portable communication device, a display device for display orfor information transfer, a medical-display device, etc.

The foregoing is illustrative of example embodiments and is not to beconstrued as limiting thereof. Although some example embodiments havebeen described, those skilled in the art will readily appreciate thatother variations and/or modifications are possible in the exampleembodiments without materially departing from the novel teachings andadvantages of the present disclosure. Accordingly, all such variationsand/or modifications are intended to be included within the scope of thepresent disclosure. Therefore, it is to be understood that the foregoingis illustrative of various example embodiments and is not to beconstrued as limited to the specific example embodiments disclosed, andthat modifications to the disclosed example embodiments, as well asother example embodiments, are intended to be included within the scopeof the present disclosure.

What is claimed is:
 1. An organic light emitting diode (OLED) displaydevice, comprising: a substrate including a plurality of sub-pixelregions and a reflection region surrounding the plurality of sub-pixelregions; a reflection structure disposed on the substrate in thereflection region and having a plurality of openings exposing theplurality of sub-pixel regions, wherein the reflection structureincludes: first reflection patterns extending in a first direction thatis parallel to an upper surface of the substrate and being spaced apartfrom each other in a second direction that is perpendicular to the firstdirection; second reflection patterns being spaced apart from each otherin the first direction between two adjacent first reflection patternsamong the first reflection patterns; and connection patternselectrically connecting two adjacent second reflection patterns in thesecond direction among the second reflection patterns; and a sub-pixelstructure disposed on the substrate in each of the plurality ofsub-pixel regions, wherein the reflection structure reflects an image ofan object that is located in front of a first surface of the OLEDdevice, and wherein the OLED device displays a displaying image in thefirst surface through the plurality of openings.
 2. The OLED device ofclaim 1, wherein the reflection structure is disposed between thesubstrate and the sub-pixel structure.
 3. The OLED device of claim 1,wherein the first reflection patterns are configured to receive a firsttouch sensing voltage from an external device, and the second reflectionpatterns are configured to receive a second touch sensing voltage fromthe external device, and wherein the external device detects a change ofcapacitance between the first reflection patterns and the secondreflection patterns.
 4. The OLED device of claim 1, wherein each of thefirst reflection patterns has a planar bar shape and is regularlyarranged in the second direction, wherein each of the second reflectionpatterns has an island shape and is regularly arranged in the firstdirection, and wherein the first reflection patterns and the secondreflection patterns are spaced apart from each other.
 5. The OLED deviceof claim 1, wherein each of the first and second reflection patterns hasa mesh structure including the plurality of openings.
 6. The OLED deviceof claim 1, further comprising: a thin film encapsulation structuredisposed on the sub-pixel structure, wherein each of the substrate andthe thin film encapsulation structure has a stack structure where atleast one organic layer and at least one inorganic layer are alternatelystacked, and the stack structure is flexible, and wherein the reflectionstructure is in contact with the at least one inorganic layer of thesubstrate, and the sub-pixel structure is in contact with the at leastone inorganic layer of the thin film encapsulation structure.
 7. TheOLED device of claim 1, further comprising: an encapsulation substratedisposed on the sub-pixel structure; and a sealant interposed betweenthe substrate and the encapsulation substrate, the sealant beingdisposed in outer regions of the substrate and the encapsulationsubstrate, wherein each of the substrate and the encapsulation substrateincludes rigid materials, and the sealant includes a frit, and whereinthe substrate and the encapsulation substrate are combined by thesealant.
 8. The OLED device of claim 1, wherein the sub-pixel structureincludes: a lower electrode disposed on the substrate, the lowerelectrode transmitting a light; a light emitting layer disposed on thelower electrode; and an upper electrode disposed on the light emittinglayer, the upper electrode reflecting a light that is emitted from thelight emitting layer, wherein a reflectivity of the upper electrode isgreater than a reflectivity of the lower electrode, and the upperelectrode is disposed on the substrate in the sub-pixel region and thereflection region.
 9. The OLED device of claim 8, wherein the upperelectrode reflects an image of an object that is located in front of asecond surface of the OLED device, wherein the second surface isopposite to the first surface.
 10. The OLED device of claim 1, furthercomprising: a semiconductor element disposed on the substrate in thereflection region; and a buffer layer disposed on the substrate betweenthe reflection structure and the semiconductor element, wherein thesemiconductor element includes: an active layer disposed on the bufferlayer in the reflection region; a gate electrode disposed on the activelayer; and source and drain electrodes disposed on the gate electrode.11. The OLED device of claim 10, wherein the connection patterns and thegate electrode are simultaneously formed using the same material. 12.The OLED device of claim 1, further comprising: a dielectric mirrorstructure disposed between the substrate and the reflection structure.13. The OLED device of claim 12, wherein the dielectric mirror structureincludes: one or more first dielectric layers having a first refractiveindex; and one or more second dielectric layers disposed on the one ormore first dielectric layers, the one or more second dielectric layershaving a second refractive index that is different from the firstrefractive index, and wherein the one or more first dielectric layersand the more second dielectric layers are alternately stacked.
 14. Anorganic light emitting diode (OLED) display device, comprising: asubstrate including a plurality of sub-pixel regions and a reflectionregion surrounding the plurality of sub-pixel regions; a reflectionstructure disposed on the substrate in the reflection region and havinga plurality of openings exposing the plurality of sub-pixel regions,wherein the reflection structure includes: first reflection patternsextending in a first direction that is parallel to an upper surface ofthe substrate and being spaced apart from each other in a seconddirection that is perpendicular to the first direction; secondreflection patterns being spaced apart from each other in the firstdirection between two adjacent first reflection patterns among the firstreflection patterns; and connection patterns electrically connecting twoadjacent second reflection patterns in the second direction among thesecond reflection patterns; and a sub-pixel structure disposed on thesubstrate in each of the plurality of sub-pixel regions, wherein atleast one groove is formed in a border of the first reflection patternand the second reflection pattern.
 15. An OLED display device,comprising: a substrate including a plurality of sub-pixel regions and areflection region surrounding the plurality of sub-pixel regions; asub-pixel structure disposed on the substrate in each of the pluralityof sub-pixel regions; and a reflection structure disposed on thesubstrate in the reflection region and having a plurality of openings,the plurality of sub-pixel regions being exposed through the pluralityof openings, wherein the reflection structure includes first reflectionpatterns arranged in a first direction and second reflection patternsarranged in the second direction that is perpendicular to the firstdirection, wherein the reflection structure reflects an image of anobject that is located in front of a first surface of the OLED device,and wherein the OLED device displays a displaying image in the firstsurface through the plurality of openings.
 16. The OLED device of claim15, wherein the reflection structure is disposed between the substrateand the sub-pixel structure.
 17. The OLED device of claim 15, whereinthe first reflection patterns are configured to receive a first touchsensing voltage from an external device, and the second reflectionpatterns are configured to receive a second touch sensing voltage fromthe external device, and wherein the external device detects a change ofcapacitance between the first reflection patterns and the secondreflection patterns.
 18. The OLED device of claim 15, wherein each ofthe first and second reflection patterns has a planar bar shape and isregularly arranged to each other, and wherein each of the first andsecond reflection patterns has a mesh structure including the pluralityof openings.
 19. The OLED device of claim 18, wherein the firstreflection patterns and the second reflection patterns are crossed in across-over region, and wherein a first group of the plurality ofopenings of the first reflection patterns and a second group of theplurality of openings of the second reflection patterns that are locatedin the cross-over region are overlapped to each other.
 20. The OLEDdevice of claim 15, further comprising: a thin film encapsulationstructure disposed on the sub-pixel structure, wherein each of thesubstrate and the thin film encapsulation structure has a stackstructure where at least one organic layer and at least one inorganiclayer are alternately stacked, and the stack structure is flexible, andwherein the reflection structure is in contact with the at least oneinorganic layer of the substrate, and the sub-pixel structure is incontact with the at least one inorganic layer of the thin filmencapsulation structure.
 21. The OLED device of claim 15, furthercomprising: a semiconductor element disposed on the substrate in thereflection region; and a buffer layer disposed on the substrate betweenthe first reflection pattern and the semiconductor element, wherein thesemiconductor element includes: an active layer disposed on the bufferlayer in the reflection region; a gate electrode disposed on the activelayer; and source and drain electrodes disposed on the gate electrode,and wherein the second reflection patterns and the gate electrode aresimultaneously formed using the same material.
 22. The OLED device ofclaim 21, further comprising: an auxiliary wiring disposed on the secondreflection pattern, the auxiliary wiring being electrically connected tothe second reflection patterns, wherein the auxiliary wiring and thesource and drain electrodes are simultaneously formed using the samematerials.
 23. The OLED device of claim 15, further comprising: adielectric mirror structure disposed between the substrate and thereflection structure, wherein the dielectric mirror structure includes:one or more first dielectric layers having a first refractive index; andone or more second dielectric layers disposed on the one or more firstdielectric layers, the one or more second dielectric layers having asecond refractive index that is different from the first refractiveindex, and wherein the one or more first dielectric layers and the oneor more second dielectric layers are alternately stacked.
 24. An OLEDdevice, comprising: a substrate including a plurality of sub-pixelregions and a reflection region surrounding the plurality of sub-pixelregions; a sub-pixel structure disposed on the substrate in each of theplurality of sub-pixel regions; and a sensing structure disposed on thesubstrate in the reflection region and having a plurality of openings,the plurality of sub-pixel regions being exposed through the pluralityof openings, wherein the sensing structure includes first sensingpatterns and second sensing patterns insulated from the first sensingpatterns, wherein the sensing structure is disposed between thesubstrate and the sub-pixel structure, wherein the sensing structurereflects an image of an object that is located in front of a firstsurface of the OLED device, and wherein the OLED device displays adisplaying image in the first surface through the plurality of openings.25. The OLED device of claim 24, wherein the sensing structure furthercomprising connection patterns electrically connecting two adjacentsecond sensing patterns in a second direction among the second sensingpatterns, wherein the first sensing patterns extend in a first directionthat is perpendicular to the second direction and are spaced apart fromeach other in the second direction, and wherein the second sensingpatterns are spaced apart from each other in the first direction and thesecond direction.
 26. The OLED device of claim 24, wherein the firstsensing patterns are arranged in a first direction, and the secondsensing patterns are arranged in a second direction that isperpendicular to the first direction.
 27. The OLED device of claim 24,wherein each of the first sensing patterns and the second sensingpatterns reflect light entering through the substrate.
 28. The OLEDdevice of claim 24, wherein the first sensing patterns are applied witha first voltage and the second sensing patterns are applied with asecond voltage, and wherein a change of capacitance between the firstsensing patterns and the second sensing patterns is detected todetermine a position of touch.
 29. The OLED device of claim 28, whereinthe first voltage is a sensing input signal and the second voltage is asensing output signal.
 30. The OLED device of claim 28, wherein thechange of capacitance between the first sensing patterns and the secondsensing patterns measures a pressure of touch.
 31. The OLED device ofclaim 28, further comprising a circuit that is configured to generatethe first voltage and the second voltage.